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CA2408582A1 - Silicon carbide metal-semiconductor field

CA2408582A1 - Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transis

Morphological Defects in Epitaxial CVD Silicon Carbide

J. A. Powell; D. J. Larkin, 1997: Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide Role of silicon dangling bonds in the elec

CA1088107A - Silicon carbide-boron carbide sintered body -

ABSTRACT OF THE DISCLOSURE A particulate mixture of .beta. -silicon carbide, boron carbide and a carbonaceous additive is formed into a green body and

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METHODS OF FORMING ARTICLES INCLUDING SILICON CARBIDE BY

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to

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A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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GROUND FAULT ISOLATION FOR POWER CONVERTERS WITH SILICON CARBIDE MOSFETSSystems and methods for grounding power generation units with silicon carbide MOSFET

US6347446B1 - Method of making silicon carbide-silicon

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A

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Sustained molecular oxygen activation by iron doped silicon carbide (Fe/SiC) was investigated under microwave (MW) irradiation. The catalytic performance of

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SILICON CARBIDE FILTER MEMBRANE AND METHODS OF USE - Entegris

Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from

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Request PDF on ResearchGate | Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: An ab initio study | Molecule-

Thermoluminescence dosimetric properties of silicon carbide (

2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in

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n junction in isolating individual electrodes (and devices) from one anotherWe have demonstrated that hexagonal silicon carbide junction isolation electrod

EP2033212B1 - Method of forming a silicon carbide pmos device

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with Alumina, Titanium dioxide and Silicon Carbide Fillers

Evaluation of Mechanical Properties of Glass Fiber Reinforced Epoxy Polymer Composites with Alumina, Titanium dioxide and Silicon Carbide Fillers

N-channel Silicon Carbide Power MOSFET for Automotive_SCT3030

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride,

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